SD5401 [Linear Systems]
QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED; QUAD N沟道横向DMOS开关齐纳保护状态型号: | SD5401 |
厂家: | Linear Systems |
描述: | QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED |
文件: | 总3页 (文件大小:505K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SD5000/5001/5400/5401
QUAD N-CHANNEL LATERAL
DMOS SWITCH
Linear Integrated Systems
ZENER PROTECTED
Product Summary
Features
Benefits
Applications
• Quad SPST Switch with Zener Input Protection
• Low Interelectrode Capacitance and Leakage
• High-Speed System Performance
• Low Insertion Loss at High
Frequencies
• Fast Analog Switch
• Fast Sample-and-Holds
• Pixel-Rate Switching
• Video Switch
• Ultra-High Speed Switching—t : 1 ns
• Ultra-Low Reverse Capacitance: 0.2 pF
• Low Guaranteed r @5 V
• Low Turn-On Threshold Voltage
ON
• Low Transfer Signal Loss
• Simple Driver Requirement
• Single Supply Operation
• Multiplexer
• DAC Deglitchers
• High-Speed Driver
DS
Description
ultra-fast switching speeds. For manufacturing reliability, these
devices feature poly-silicon gates protected by Zener diodes
The SD5000/5400 series of monolithic switches features four
individual double-diffused enhancement-mode MOSFETs built
on a common substrate. These bidirectional devices provide low
on-resistance and low interelectrode capacitances to minimize
insertion loss and crosstalk.
The SD 5000/5400 are rated to handle ±10-V analog signals,
while the SD5001/5401 are rated for ±5-V signals.
For similar products packaged in TO-206AF (TO-72) and TO-
253 (SOT-143) see the SD211DE/SST211 series.
Built on Siliconix’ proprietary DMOS process, the SD5000/5400
series utilizes lateral construction to achieve low capacitance and
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Linear Integrated Systems
Absolute Maximum Ratings (TA = 250C Unless Otherwise Noted)
Gate-Drain, Gate-Source Voltage
(SD5000, SD5400) ...................................................................... +30 V/-25 V
(SD5001, SD5401) ...................................................................... +25 V/-15 V
Drain Current ........................................................................................ 50 mA
Lead Temperature (1/16” from case for 10 seconds) ............................. 3000C
Storage Temperature .................................................................... -65 to 1500C
Operating Junction Temperature ................................................. -55 to 1500C
Gate-Substrate Voltage
(SD5000, SD5400) ............. +30 V/-0.3 V
(SD5001, SD5401) ............. +25 V/-0.3 V
(SD5000, SD5400) ........................... 20 V
(SD5001, SD5401 ............................. 10 V
Power Dissipationa, b
:
(Package) .................................................. 500 mW
(each Device) ........................................... 300 mW
Drain-Source Voltage
Notes:
Drain-Source-Substrate Voltage (SD5000, SD5400) ........................... 25 V
(SD5001, SD5401) ........................... 15 V
a. SD5000/SD5001 derate 5 mW/0C above 250C
b. SD5400/SD5401 derate 4 mW/0C above 250C
Specificationsa
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Linear Integrated Systems
Specificationsa
Notes:
DMCA
a. T = 250C unless otherwise noted.
A
b. B is the body (substrate) and V
is breakdown.
(BR)
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Linear Integrated Systems
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